DS30346 Rev. 1 - 1
1 of 2
DDA (xxxx) U
Epitaxial Planar Die Construction
Complementary NPN Types Available
(DDC)
Built-In Biasing Resistors
Characteristic
Symbol
Value
Unit
Supply Voltage, (3) to (1)
V
CC
50
V
Input Voltage, (2) to (1)
DDA124EU
DDA144EU
DDA114YU
DDA123JU
DDA114EU
DDA143TU
DDA114TU
V
IN
+10 to -40
+10 to -40
+6 to -40
+5 to -12
+10 to -40
+5 Vmax
+5 Vmax
V
Output Current DDA124EU
DDA144EU
DDA114YU
DDA123JU
DDA114EU
DDA143TU
DDA114TU
I
O
-30
-30
-70
-100
-50
-100
-100
mA
Output Current
All
I
C
(Max)
-100
mA
Power Dissipation
P
d
-200
mW
Operating and Storage and Temperature Range
T
j
, T
STG
-55 to +150
C
Features
Maximum Ratings
@ T
A
= 25
C unless otherwise specified
A
M
J
L
F
D
B C
H
K
PXX YM
PXXYM
Mechanical Data
Case: SOT-363, Molded Plastic
Case material - UL Flammability Rating 94V-0
Terminals: Solderable per MIL-STD-202,
Method 208
Terminal Connections: See Diagram
Weight: 0.006 grams (approx.)
NEW
PRODUCT
P/N
R1
R2
MARKING
DDA124EU
DDA144EU
DDA114YU
DDA123JU
DDA114EU
DDA143TU
DDA114TU
22K
47K
10K
2.2K
10K
4.7K
10K
22K
47K
47K
47K
10K
-
-
P17
P20
P14
P06
P13
P07
P12
SOT-363
Dim
Min
Max
A
0.10
0.30
B
1.15
1.35
C
2.00
2.20
D
0.65 Nominal
E
0.30
0.40
G
1.80
2.20
H
1.80
2.20
J
0.10
K
0.90
1.00
L
0.25
0.40
M
0.10
0.25
All Dimensions in mm
R
1
R
1
R
2
R
2
R
1
R
1
R
1
, R
2
R
1
Only
SCHEMATIC DIAGRAM
DDA (xxxx) U
PNP PRE-BIASED SMALL SIGNAL SOT-363
DUAL SURFACE MOUNT TRANSISTOR
UNDER DEVELOPMENT
DS30346 Rev. 1 - 1
2 of 2
DDA (xxxx) U
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Input Voltage
DDA124EU
DDA144EU
DDA114YU
DDA123JU
DDA114EU
V
l(off)
-0.5
-0.5
-0.3
-0.5
-0.5
-1.1
-1.1
--
--
-1.1
V
V
CC
= -5V, I
O
= -100
mA
DDA124EU
DDA144EU
DDA114YU
DDA123JU
DDA114EU
V
l(on)
-1.9
-1.9
--
--
-1.9
-3.0
-3.0
-1.4
-1.1
-3.0
V
O
= -0.3, I
O
= -5mA
V
O
= -0.3, I
O
= -2mA
V
O
= -0.3, I
O
= -1mA
V
O
= -0.3, I
O
= -5mA
V
O
= -0.3, I
O
= -10mA
Output Voltage
DDA124EU
DDA144EU
DDA114YU
DDA123JU
DDA114EU
V
O(on)
-0.1
-0.3
V
I
O
/I
l
= -10mA / -0.5mA
I
O
/I
l
= -10mA / -0.5mA
I
O
/I
l
= -5mA / -0.25mA
I
O
/I
l
= -5mA / -0.25mA
I
O
/I
l
= -10mA / -0.5mA
Input Current
DDA124EU
DDA144EU
DDA114YU
DDA123JU
DDA114EU
I
l
-0.36
-0.18
-0.88
-3.6
-0.88
mA
V
I
= -5V
Output Current
I
O(off)
-0.5
mA
V
CC
= -50V, V
I
= -0V
DC Current Gain
DDA124EU
DDA144EU
DDA114YU
DDA123JU
DDA114EU
G
l
56
68
68
80
30
V
O
= -5V, I
O
= -5mA
V
O
= -5V, I
O
= -5mA
V
O
= -5V, I
O
= -10mA
V
O
= -5V, I
O
= -10mA
V
O
= -5V, I
O
= -5mA
Gain-Bandwidth Product*
f
T
250
MHz
V
CE
= -10V, I
E
= -5mA,
f = 100MHz
Electrical Characteristics
@ T
A
= 25
C unless otherwise specified
NEW
PRODUCT
* Transistor - For Reference Only
Characteristic (DDA143TU & DDA114TU only)
Symbol
Min
Typ
Max
Unit
Test Condition
Collector-Base Breakdown Voltage
BV
CBO
-50
V
I
C
= -50
mA
Collector-Emitter Breakdown Voltage
BV
CEO
-50
V
I
C
= -1mA
Emitter-Base Breakdown Voltage
BV
EBO
-5
V
I
E
= -50
mA
Collector Cutoff Current
I
CBO
-0.5
mA
V
CB
= -50V
Emitter Cutoff Current
I
EBO
-0.5
mA
V
EB
= -4V
Collector-Emitter Saturation Voltage
V
CE(sat)
-0.3
V
I
C
/I
B
= -2.5mA / -0.25mA
DDA143TU
I
C
/I
B
= -1mA / -0.1mA DDA114TU
DC Current Transfer Ratio
h
FE
100
250
600
I
C
= -1mA, V
CE
= -5V
Gain-Bandwidth Product*
f
T
250
MHz
V
CE
= -10V, I
E
= 5mA, f = 100MHz
UNDER DEVELOPMENT
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